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data book 1 2.00 hyr 16xx30g/hyr 18xx20g rambus rimm modules direct rdram rimm modules (with 128/144 mbit rdrams) overview the direct rambus ? rimm ? module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. the direct rambus rimm module consists of 128 mb/144 mbit direct rambus dram (direct rdram?) devices. these are extremely high-speed cmos drams organized as 8m words by 16 or 18 bits. the use of rambus signaling level (rsl) technology permits 600 mhz to 800 mhz transfer rates while using conventional system and board design technologies. direct rdram devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes). the rdram architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. the separate control and data buses with independent row and column control yield over 95% bus efficiency. the rdram's 32-bank architecture supports up to four simultaneous transactions per device. form factor the rambus rimm modules are offered in a 184-pad 1 mm edge connector pad pitch form factor suitable for 184 contact rimm connectors. the rimm module is suitable for desktop and other system applications. the next figure shows an eight device rambus rimm module without heat spreader. features ? high speed 800, 711 & 600 mhz rdram storage ? 184 edge connector pads with 1 mm pad spacing ? maximum module pcb size: 133.5 mm 31.75 mm 1.37 mm (5.25 1.25 0.05) ? each rdram has 32 banks, for a total of 512, 256 or 128 banks on each 256/288 mb, 128/144mb or 64/72 mb module respectively. ? gold plated edge connector pad contacts ? serial presence detect (spd) support ? operates from a 2.5 v supply ( 5%) ? low power and powerdown self refresh modes ? separate row and column buses for higher efficiency fig.1 : rambus rimm module (without heat spreader) ,
hyr 16xx30g/hyr 18xx20g rambus rimm modules data book 2 2.00 part number designators organization capacity i/o frequency [mhz] part designator # of rdrams rdram density 64 mb/72 mb 32 mb 16 64 mb 600 hyr163230g-653 4 128 mbit 32 mb 16 64 mb 711 hyr163230g-745 4 32 mb 16 64 mb 800 hyr163230g-845 4 32 mb 16 64 mb 800 hyr163230g-840 4 32 mb 18 72 mb 600 hyr183220g-653 4 144 mbit 32 mb 18 72 mb 711 hyr183220g-745 4 32 mb 18 72 mb 800 hyr183220g-845 4 32 mb 18 72 mb 800 hyr183220g-840 4 128 mb/144 mb 64 mb 16 128 mb 600 hyr166430g-653 8 128 mbit 64 mb 16 128 mb 711 hyr166430g-745 8 64 mb 16 128 mb 800 hyr166430g-845 8 64 mb 16 128 mb 800 HYR166430G-840 8 64 mb 18 144 mb 600 hyr186420g-653 8 144 mbit 64 mb 18 144 mb 711 hyr186420g-745 8 64 mb 18 144 mb 800 hyr186420g-845 8 64 mb 18 144 mb 800 hyr186420g-840 8 256 mb/288 mb 128 mb 16 256 mb 600 hyr1612830g-653 16 128 mbit 128 mb 16 256 mb 711 hyr1612830g-745 16 128 mb 16 256 mb 800 hyr1612830g-845 16 128 mb 16 256 mb 800 hyr1612830g-840 16 128 mb 18 288 mb 600 hyr1812820g-653 16 144 mbit 128 mb 18 288 mb 711 hyr1812820g-745 16 128 mb 18 288 mb 800 hyr1812820g-845 16 128 mb 18 288 mb 800 hyr1812820g-840 16
hyr 16xx30g/hyr 18xx20g rambus rimm modules data book 3 2.00 pin configuration pin pin name pin pin name pin pin name pin pin name a1 gnd b1 gnd a47 n.c. b47 n.c. a2 ldqa8 b2 ldqa7 a48 n.c. b48 n.c. a3 gnd b3 gnd a48 n.c. b49 n.c. a4 ldqa6 b4 ldqa5 a50 n.c. b50 n.c. a5 gnd b5 gnd a51 v ref b51 v ref a6 ldqa4 b6 ldqa3 a52 gnd b52 gnd a7 gnd b7 gnd a53 scl b53 sa0 a8 ldqa2 b8 ldqa1 a54 v dd b54 v dd a9 gnd b9 gnd a55 sda b55 sa1 a10 ldqa0 b10 lcfm a56 svdd b56 svdd a11 gnd b11 gnd a57 swp b57 sa2 a12 lctmn b12 lcfmn a58 v dd b58 v dd a13 gnd b13 gnd a59 rsck b59 rcmd a14 lctm b14 n.c. a60 gnd b60 gnd a15 gnd b15 gnd a61 rdqb7 b61 rdqb8 a16 n.c. b16 lrow2 a62 gnd b62 gnd a17 gnd b17 gnd a63 rdqb5 b63 rdqb6 a18 lrow1 b18 lrow0 a64 gnd b64 gnd a19 gnd b19 gnd a65 rdqb3 b65 rdqb4 a20 lcol4 b20 lcol3 a66 gnd b66 gnd a21 gnd b21 gnd a67 rdqb1 b67 rdqb2 a22 lcol2 b22 lcol1 a68 gnd b68 gnd a23 gnd b23 gnd a69 rcol0 b69 rdqb0 a24 lcol0 b24 ldqb0 a70 gnd b70 gnd a25 gnd b25 gnd a71 rcol2 b71 rcol1 a26 ldqb1 b26 ldqb2 a72 gnd b72 gnd a27 gnd b27 gnd a73 rcol4 b73 rcol3 a28 ldqb3 b28 ldqb4 a74 gnd b74 gnd a29 gnd b29 gnd a75 rrow1 b75 rrow0 a30 ldqb5 b30 ldqb6 a76 gnd b76 gnd a31 gnd b31 gnd a77 n.c. b77 rrow2 a32 ldqb7 b32 ldqb8 a78 gnd b78 gnd a33 gnd b33 gnd a79 rctm b79 n.c.
hyr 16xx30g/hyr 18xx20g rambus rimm modules data book 4 2.00 a34 lsck b34 lcmd a80 gnd b80 gnd a35 v cmos b35 v cmos a81 rctmn b81 rcfmn a36 sout b36 sin a82 gnd b82 gnd a37 v cmos b37 v cmos a83 rdqa0 b83 rcfm a38 n.c. b38 n.c. a84 gnd b84 gnd a39 gnd b39 gnd a85 rdqa2 b85 rdqa1 a40 n.c. b40 n.c. a86 gnd b86 gnd a41 v dd b41 v dd a87 rdqa4 b87 rdqa3 a42 v dd b42 v dd a88 gnd b88 gnd a43 n.c. b43 n.c. a89 rdqa6 b89 rdqa5 a44 n.c. b44 n.c. a90 gnd b90 gnd a45 n.c. b45 n.c. a91 rdqa8 b91 rdqa7 a46 n.c. b46 n.c. a92 gnd b92 gnd pin configuration (contd) pin pin name pin pin name pin pin name pin pin name
hyr 16xx30g/hyr 18xx20g rambus rimm modules data book 5 2.00 module connector pad description signal module connector pads i/o type description gnd a1, a3, a5, a7, a9, a11, a13, a15, a17, a19, a21, a23, a25, a27, a29, a31, a33, a39, a52, a60, a62, a64, a66, a68, a70, a72, a74, a76, a78, a80, a82, a84, a86, a88, a90, a92, b1, b3, b5, b7, b9, b11, b13, b15, b17, b19, b21, b23, b25, b27, b29, b31, b33, b39, b52, b60, b62, b64, b66, b68, b70, b72, b74, b76, b78, b80, b82, b84, b86, b88, b90, b92 C C ground reference for rdram core and interface. 72 pcb connector pads. lcfm b10 i rsl clock from master. interface clock used for receiving rsl signals from the channel. positive polarity. lcfmn b12 i rsl clock from master. interface clock used for receiving rsl signals from the channel. negative polarity. lcmd b34 i v cmos serial command used to read from and write to the control registers. also used for power management. lcol4 lcol0 a20, b20, a22, b22, a24 i rsl column bus. 5-bit bus containing control and address information for column accesses. lctm a14 i rsl clock to master. interface clock used for transmitting rsl signals to the channel. positive polarity. lctmn a12 i rsl clock to master. interface clock used for transmitting rsl signals to the channel. negative polarity. ldqa8 ldqa0 a2, b2, a4, b4, a6, b6, a8, b8, a10 i/o rsl data bus a. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. ldqa8 is non-functional on modules with x16 rdram devices.
hyr 16xx30g/hyr 18xx20g rambus rimm modules data book 6 2.00 ldqb8 ldqb0 b32, a32, b30, a30, b28, a28, b26, a26, b24 i/o rsl data bus b. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. ldqb8 is non-functional on modules with x16 rdram devices. lrow2 lrow0 b16, a18, b18 i rsl row bus. 3-bit bus containing control and address information for row accesses. lsck a34 i v cmos serial clock input. clock source used to read from and write to the rdram control registers. n.c. a16, b14, a38, b38, a40, b40, a77, b79;a43, b43, a44, b44, a45, b45, a46, b46, a47, b47, a48, b48, a49, b49, a50, b50 C C these pads are not connected. these connector pads are reserved for future use. rcfm b83 i rsl clock from master. interface clock used for receiving rsl signals from the channel. positive polarity. rcfmn b81 i rsl clock from master. interface clock used for receiving rsl signals from the channel. negative polarity. rcmd b59 i v cmos serial command input used to read from and write to the control registers. also used for power management. rcol4 rcol0 a73, b73, a71, b71, a69 i rsl column bus. 5-bit bus containing control and address information for column accesses. rctm a79 i rsl clock to master. interface clock used for transmitting rsl signals to the channel. positive polarity. rctmn a81 i rsl clock to master. interface clock used for transmitting rsl signals to the channel. negative polarity. rdqa8 rdqa0 a91, b91, a89, b89, a87, b87, a85, b85, a83 i/o rsl data bus a. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. rdqa8 is non-functional on modules with x16 rdram devices. module connector pad description (contd) signal module connector pads i/o type description
hyr 16xx30g/hyr 18xx20g rambus rimm modules data book 7 2.00 rdqb8 rdqb0 b61, a61, b63, a63, b65, a65, b67, a67, b69 i/o rsl data bus b. a 9-bit bus carrying a byte of read or write data between the channel and the rdram. rdqb8 is non-functional on modules with x16 rdram devices. rrow2 rrow0 b77, a75, b75 i rsl row bus. 3-bit bus containing control and address information for row accesses. rsck a59 i v cmos serial clock input. clock source used to read from and write to the rdram control registers. sa0 b53 i svdd serial presence detect address 0. sa1 b55 i svdd serial presence detect address 1. sa2 b57 i svdd serial presence detect address 2. scl a53 i svdd serial presence detect clock. sda a55 i/o svdd serial presence detect data (open collector i/o). sin b36 i/o v cmos serial i/o for reading from and writing to the control registers. attaches to sio0 of the first rdram on the module. sout a36 i/o v cmos serial i/o for reading from and writing to the control registers. attaches to sio1 of the last rdram on the module. svdd a56, b56 C C spd voltage. used for signals scl, sda, swe, sa0, sa1 and sa2. swp a57 i svdd serial presence detect write protect (active high). when low, the spd can be written as well as read. v cmos a35, b35, a37, b37 C C cmos i/o voltage. used for signals cmd, sck, sin, sout. v dd a41, a42, a54, a58, b41, b42, b54, b58 C C supply voltage for the rdram core and interface logic. v ref a51, b51 C C logic threshold reference voltage for rsl signals. module connector pad description (contd) signal module connector pads i/o type description
hyr 16xx30g/hyr 18xx20g rambus rimm modules data book 8 2.00 rimm module functional diagram u0 dqa8 dqa7 dqa6 dqa5 dqa4 dqa3 dqa2 dqa1 dqa0 cfm cfmn ctm ctmn row2 row1 row0 col4 col3 col2 col1 col0 dqb0 dqb1 dqb2 dqb3 dqb4 dqb5 dqb6 dqb7 dqb8 sio1 sio0 sck cmd vref direct rdram (128/144mb) rdqa8 rdqa7 rdqa6 rdqa5 rdqa4 rdqa3 rdqa2 rdqa1 rdqa0 rcfm rcfmn rctm rctmn rrow2 rrow1 rrow0 rcol4 rcol3 rcol2 rcol1 rcol0 rdqb0 rdqb1 rdqb2 rdqb3 rdqb4 rdqb5 rdqb6 rdqb7 rdqb8 ldqa8 ldqa7 ldqa6 ldqa5 ldqa4 ldqa3 ldqa2 ldqa1 ldqa0 lcfm lcfmn lctm lctmn lrow2 lrow1 lrow0 lcol4 lcol3 lcol2 lcol1 lcol0 ldqb0 ldqb1 ldqb2 ldqb3 ldqb4 ldqb5 ldqb6 ldqb7 ldqb8 u1 u2 u3 un . . . si n lsck lcmd vref sout rsck rcmd vdd gnd 2 per rdram scl sda a[0:2] scl sa[0:2] sda serial presence detect note 1: rambus channel signals form a loop through the rimm module, with the exception of the sio dqa8 dqa7 dqa6 dqa5 dqa4 dqa3 dqa2 dqa1 dqa0 cfm cfmn ctm ctmn row2 row1 row0 col4 col3 col2 col1 col0 dqb0 dqb1 dqb2 dqb3 dqb4 dqb5 dqb6 dqb7 dqb8 si o1 si o0 sck cmd vref direct rdram (128/144mb) dqa8 dqa7 dqa6 dqa5 dqa4 dqa3 dqa2 dqa1 dqa0 cfm cfmn ctm ctmn row2 row1 row0 col4 col3 col2 col1 col0 dqb0 dqb1 dqb2 dqb3 dqb4 dqb5 dqb6 dqb7 dqb8 si o1 si o0 sck cmd vref direct rdram (128/144mb) dqa8 dqa7 dqa6 dqa5 dqa4 dqa3 dqa2 dqa1 dqa0 cfm cfmn ctm ctmn row2 row1 row0 col4 col3 col2 col1 col0 dqb0 dqb1 dqb2 dqb3 dqb4 dqb5 dqb6 dqb7 dqb8 si o1 si o0 sck cmd vref direct rdram (128/144mb) 0. 1 m f vcmos gnd 1 per 2 rdrams 0.1 m f vref gnd 1 per 0. 1 m f 2 rdrams puls one near connector vcc svdd swp svdd gnd module capacity n 64mb/72mb 4 8 16 chain. note 2: see serial presence detection specification for information on the spd device and its contents. 0. 1 m f 128mb/44mb 256mb/288mb
hyr 16xx30g/hyr 18xx20g rambus rimm modules data book 9 2.00 1) the table below shows the number of 128 mbit rdram devices contained in a rimm module of listed memory storage capacity . absolute maximum ratings symbol parameter limit values unit min. max. v i,abs voltage applied to any rsl or cmos signal pad with respect to gnd C0.3 v dd +0.3 v v dd,abs voltage on v dd with respect to gnd C 0.5 v dd +1.0 v t store storage temperature C 50 100 c dc recommended electrical conditions symbol parameter and conditions limit values unit min. max. v dd supply voltage 2.50 C 0.13 2.50 + 0.13 v v cmos cmos i/o power supply at pad for 2.5 v controllers: cmos i/o power supply at pad for 1.8 v controllers: 2.5 C 0.13 1.8 C 0.1 2.5 + 0.25 1.8 + 0.2 v v v ref reference voltage 1.4 C 0.2 1.4 + 0.2 v v il rsl input low voltage v ref C0.5 v ref C0.2 v v ih rsl input high voltage v ref +0.2 v ref +0.5 v v il,cmos cmos input low voltage C 0.3 0.5 v cmos C0.25 v v ih,cmos cmos input high voltage 0.5 v cmos +0.25 v cmos +0.7 v v ol,cmos cmos output low voltage @ i ol,cmos =1ma C0.3 v v oh,cmos cmos output high voltage @ i oh,cmos = C 0.25 ma v cmos C0.3 C v i ref v ref current @ v ref,max C10 no. rdrams 1) 10 no. rdrams 1) m a i sck,cmd cmos input leakage current @ (0 v cmos v dd ) C10 no. rdrams 1) 10 no. rdrams 1) m a i sin,sout cmos input leakage current @ (0 v cmos v dd ) C 10.0 10.0 m a rimm module capacity 64/72 mb 128/144 mb 256/288 mb number of 128/144 mbit rdram devices 4 8 16
hyr 16xx30g/hyr 18xx20g rambus rimm modules data book 10 2.00 1) table below lists parameters and specifications for different storage capacity rimm modules that use 128 mbit or 144 mbbit rdram devices. 2) average clock delay is defined as the average delay from finger to finger of all rsl clock nets (ctm, ctmn, .....cfm and cfmn). 3.) if the rimm module meets the folowwing specifications, then it is compliant to the specification. if the rimm .....module does not meet these specifications, then the specification can be adjusted by the adjusted d t pd - .....specification table. adjusted d t pd specfication a) where: n = nuber of rdram devices installed on the rimm module dz0 = delta z0% =(max z0 - minz0)/(min z0) (max z= and min z0 are obtained from the loaded (high impedance) impedance coupons of all rsl layers on the modules) ac electrical specifications symbol parameter and conditions limit values unit min. typ. max. z module impedance 25.2 28 30.8 w t pd average clock delay from finger of all rsl clock nets (ctm, ctmn, cfm and cfmn) C C see table 1) ns d t pd propagation delay variation of rsl signals with respect to t pd 2)3 ) for 4 and 8 device modules C 21 C 21 ps propagation delay variation of rsl signals with respect to t pd 2)3 ) for 16 device modules C 24 C 24 ps d t pd-cmos propagation delay variation of sck and cmd signals with respect to an average clock delay 2) C 100 C 100 ps v a / v in attenuation limit C C see table 1) % v xf / v in forward crosstalk coefficient (300 ps input rise time @ 20%-80%) C C see table 1) % v xb / v in backward crosstalk coefficient (300 ps input rise time @ 20%-80%) C C see table 1) % symbol parameter and conditions adjusted min/max absolute min /max unit d t pd propagation delay variation of rsl signals with respect to t pd for 4 and 8 device modules +/-[17+(18*n* d z0)] a -30 30 ps propagation delay variation of rsl signals with respect to t pd for 16 device modules +/-[24+(18*n* d z0)] -50 50 ps
hyr 16xx30g/hyr 18xx20g rambus rimm modules data book 11 2.00 ac electrical specifications for rimm modules symbol rimm module capacity: no. of 128/144 mbit rdrams: 64/72 mb 4 128/144 mb 8 256/288 mb 16 unit parameter and conditions for -800, 711& -600 rimm modules max. max. max. t pd propagation delay, all rsl signals -800, -711 1.25 1.50 2.06 ns propagation delay, all rsl signals -600 1.25 1.60 2.10 ns v a / v in attenuation limit -800, -711 12 16 25 % attenuation limit -600 8 10 21 % v xf / v in forward crosstalk coefficient (300 ps input rise time @ 20% - 80%) -800, -711, -600 248% v xb / v in backward crosstalk coefficient (300 ps input rise time @ 20%-80%) -800, -711, -600 1.5 2.0 2.5 % r dc dc resistance limit -800, -711, -600 0.6 0.8 1.2 w
hyr 16xx30g/hyr 18xx20g rambus rimm modules data book 12 2.00 a) actual power will depend on individual memory controller and usage pattern. power does not include refresh current. b) i/o power is a function of % 1s to add i/o power for 50% 1s for a x 16 need to add 257ma or 290ma for x18 ecc module for the following: v dd = 2.5v, v term = 1.8v, v ref = 1.4v and v dil = v ref = 0.5v. rimm module current profile i dd rimm module capacity: no. of 128/144 mbit rdrams: 64/72 mb 4 128/144 mb 8 256/288 mb 16 unit rimm modules power conditions a) freq. max. max. max. i dd1 one rdram in read b , balance in nap mode -800 530/585 545/600 580/635 ma -711 480/530 495/545 530/580 ma -600 420/460 435/475 470/510 ma i dd2 one rdram in read b , balance in standby mode -800 820/875 1220/1275 2020/2075 ma -711 755/805 1135/1185 1895/1945 ma -600 680/720 1040/1080 1760/1800 ma i dd3 one rdram in read b , balance in active mode -800 970/1025 1570/1625 2770/2825 ma -711 905/955 1485/1535 2645/2695 ma -600 830/870 1390/1430 2510/2550 ma i dd4 one rdram in write, balance in active mode -800 585/645 600/660 635/695 ma -711 525/580 540/595 575/630 ma -600 460/505 475/520 510/555 ma i dd5 one rdram in write, balance in standby mode -800 875/935 1275/1335 2075/2135 ma -711 800/855 1180/1235 1940/1995 ma -600 720/765 1080/1125 1800/1845 ma i dd6 one rdram in write, balance in active mode -800 1025/1085 1625/1685 2825/2885 ma -711 950/1005 1530/1585 2690/2745 ma -600 870/915 1430/1475 2550/2595 ma
hyr 16xx30g/hyr 18xx20g rambus rimm modules data book 13 2.00 the following defines the rimm module dimensions. all units are in millimeters. rimm module pcb physical description dimension description limit values unit min. nom. max. a pcb length 133.20 5.244 133.35 5.250 133.50 5.256 mm in b pcb height C C 31.75 1.25 mm in c center-center pad width from pad a1 to a46, a47 to a92, b1 to b46 or b47 to b92 C C 45.00 1.770 mm in d spacing from pcb left edge to connector key notch 55.10 2.169 55.175 2.172 55.25 2.175 mm in e spacing from contact pad pcb edge to side edge retainer notch C C 17.78 0.700 mm in f pcb thickness 1.17 0.046 1.27 0.050 1.37 0.054 mm in g heat spreader thickness from pcb surface (one side) to heat spreader top surface CC3.02 0.119 mm in fig.2 : rimm module pcb physical description
hyr 16xx30g/hyr 18xx20g rambus rimm modules data book 14 2.00 standard rimm module marking the rimm modules available from infineon technoligies will be marked per figure 3 below. this marking will help oems and users identify the rambus rimm modules when used in specific system applications. this will assist oems or users to specify and correctly verify if the correct rimm modules are installed in their systems. in the diagram, a label is shown attached to the rimm modules heat spreader. standard rimm module marking label field description marked text unit a module memory capacity number of 8-bit or 9-bit mbytes of rdram storage in rimm module 256mb, 128mb, 64mb mb b number of rdrams number of rdram devices contained in the rimm module 16, 8, 4 rdram devices c ecc support indicates whether the rimm module supports 8-bit (no ecc) or 9-bit (ecc) bytes blank = 8-bit byte ecc = 9-bit byte C d memory speed data transfer speed for rdram rimm module 800, 711, 600 mhz et rac row access time -45, -53 ns f part number infineon part number g manufacturing code date code etc. g ab c d e f fig.3 standard rimm module marking

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